GB827762A — Improvements in or relating to processes for the production of semi-conductor devices

USPTO Abstract

827,762. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. Jan. 31, 1957 [Feb. 8, 1956], No. 3482/57. Class 37. In a process for producing semi-conductor devices comprising one or more electrodes, electrode material is applied to the surface of a semiconductor member and both are embedded in a pulverous substance which does not react with either, and which is compressed and heated so that the material and the member are alloyed together. As shown, Fig. 3, a disc 8a of P-type silicon is placed between pieces of aluminium foil 8b and gold foil 8c containing 1% antimony, the components 8a-8c are sandwiched between two tablets of powdered graphite 4a, 4b, previously formed by compression in metal tubes 2, 6 respectively, and the tablets are pressed together to form a uniform mass of graphite powder 4, Fig. 4, between two plungers 7, 9 of compacted graphite in tube 2, the whole being held together in a clamping frame 10 provided with a pressure screw 11 and heated to 800‹ C. for 30 secs. to effect the alloying. The semiconductor member may be germanium or an intermetallic compound of elements of the 3rd and 5th groups of the Periodic System. The pulverous substance may be magnesium oxide, aluminium oxide, &c., or a mixture thereof, and heating may take place in vacuo, in an inert atmosphere, or in air. Fig. 5 depicts a transistor produced in accordance with the invention comprising a semi-conductor member 16, a base electrode 13, a collector electrode 15, and an emitter electrode 14 located within a groove in the member 16.