EP0011629A1 — Shallow-homojunction solar cells
Assigned to Massachusetts Institute of Technology · Expires 1980-06-11 · 46y expired
What this patent protects
Improvements to surface homojunction solar cells formed by a plurality of layers of semiconductor material with direct interaction space such as GaAs, as well as their manufacture. Solar cells with surface homojunction have an n + / p / p + structure (26, 24, 22) in which…
USPTO Abstract
Improvements to surface homojunction solar cells formed by a plurality of layers of semiconductor material with direct interaction space such as GaAs, as well as their manufacture. Solar cells with surface homojunction have an n + / p / p + structure (26, 24, 22) in which the upper layer n + (26) is limited in thickness, which makes it possible to have significant carrier activity at the level of the layer lower semiconductor (24). An anti-reflective coating (28) is applied to the upper n + layer (26), application preferably carried out by anodic treatment. These solar cells can be produced on relatively inexpensive substrates such as silicon or germanium.
Drugs covered by this patent
Bibliographic data sourced from FDA Orange Book + USPTO public records. Plain-English summary generated by AI grounded in source text. Patent term extensions (PTR, SPC, pediatric) may shift the effective expiry. Not legal advice.
Track this patent
Get a daily-checked alert when vulnerability score, expiry, classification, or assignee changes. Email, Slack, or Teams delivery. Pro: 50 watches, Free: 3.