CN Patent

CN104894538A — 还原低温基底上的薄膜的方法

Assigned to NCC Nano LLC · Expires 2015-09-09 · 11y expired

What this patent protects

本发明公开了还原低温基底上的薄膜的方法，具体地涉及在基底上制造导电薄膜的方法，所述方法包括：将还原剂和金属氧化物沉积在薄膜上；和使所述薄膜在环境气氛中暴露于单脉冲电磁发射，以使所述还原剂首先与所述金属氧化物通过氧化还原反应进行化学反应形成金属粒子，随后烧结所述金属粒子，从而使所述薄膜导电。

USPTO Abstract

本发明公开了还原低温基底上的薄膜的方法，具体地涉及在基底上制造导电薄膜的方法，所述方法包括：将还原剂和金属氧化物沉积在薄膜上；和使所述薄膜在环境气氛中暴露于单脉冲电磁发射，以使所述还原剂首先与所述金属氧化物通过氧化还原反应进行化学反应形成金属粒子，随后烧结所述金属粒子，从而使所述薄膜导电。

Drugs covered by this patent

Patent Metadata

Patent number
CN104894538A
Jurisdiction
CN
Classification
—
Expires
2015-09-09
Drug substance claim
No
Drug product claim
No
Assignee
NCC Nano LLC
Source
FDA Orange Book + USPTO grounding via Google Patents

Bibliographic data sourced from FDA Orange Book + USPTO public records. Plain-English summary generated by AI grounded in source text. Patent term extensions (PTR, SPC, pediatric) may shift the effective expiry. Not legal advice.

Track this patent

Get a daily-checked alert when vulnerability score, expiry, classification, or assignee changes. Email, Slack, or Teams delivery. Pro: 50 watches, Free: 3.